Samsung has announced that it has started mass production of 4 gigabyte DDR3 RAM using most advanced 20 nanometer process. SRAM miniaturization is more difficult than NAND memory as DRAM cells require both capacitor and transistor linked to another capacitor while the NAND require just the transistor.
The Korean electronic giant overcame this hurdle by refining its design and manufacturing technologies that enabled it produce it under 20nm process.
The main benefit of 20nm 4GB DDR3 based modules is that it yields higher cell performance and reduces energy consumption. This will also Samsung to reduce the prices of units in long run. However, these benefits will be passed onto end users.